Product specification
2SA1774
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Unit: mm
+0.01
0.1
-0.01
Features
Excellent hFE linearity.
PNP silicon transistor
2
1
+0.15
1.6
-0.15
0.55
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-60
-50
-6
-0.15
0.15
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current Gain
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
I
C
=-50
I
C
=-1mA
I
E
=-50ìA
V
CB
=-60V
V
EB
=-6V
A
Testconditons
Min
-60
-50
-6
-0.1
-0.1
-0.5
120
4.0
140
560
5.0
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
V
CE(sat)
I
C
/I
B
=-50mA/-5mA
h
FE
C
ob
f
T
V
CE
=-6V, I
C
=-1mA
V
CB
=-12V, I
E
=0A, f=1MHz
V
CE
=-12V, I
E
=2mA, f=30MHz
■
h
FE
Classification
Marking
Rank
h
FE
FQ
Q
FR
FS
S
R
180
½
390
120½270
270½
560
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.05
0.8
-0.05
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
