SMD Type
Transistors
IC
Product specification
2SA1815
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High power gain:PG=25dB typ(f=100MHz)
High cutoffrequency:fT=750MHz typ
Low collector-to-emitter saturation voltage
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Features
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-15
-12
-3
-50
250
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output Capacitance
Reverse Transfer Capacitance
C-E Saturation Voltage
Power Gain
Symbol
Ic
BO
I
EBO
h
FE
Ft
C
ob
Cob
V
CE(sat)
P
G
Testconditons
V
CB
= -12V , I
E
= 0
V
EB
= -2V , I
C
= 0
V
CE
= -10V , I
C
= -5mA
V
CE
= -10V , I
C
= -5mA
V
CB
=-10V,f=1MHz
V
CB
=-10V,f=1MHz
I
C
=-10mA,I
B
=-1mA
V
CE
=-10V,I
C
=-10mA,f=100MHz
60
750
1.2
0.9
-0.1
25
-0.3
1.6
Min
Typ
Max
-0.1
-0.1
270
MHz
pF
pF
V
dB
Unit
ìA
ìA
h
FE
Classification
Marking
Rank
hFE
3
60 to 120
JS
4
90 to 180
5
135 to 270
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
