SMD Type
IC
Product specification
2SA1875
TO-252
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High f
T
: f
T
=400MHz(typ).
High breakdown voltage : V
CEO
Large current capacitance.
Adoption of FBET process.
200V(min).
+0.2
9.70
-0.2
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
T
c
=25
Junction Temperature
Storage Temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
-200
-200
-3
-300
-600
-30
0.8
12
150
-55 to 150
Unit
V
V
V
mA
mA
mA
W
W
3
.8
0
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
