SMD Type
IC
Product specification
2SA1944
Features
High voltage V
CEO
=-50V
Low collector to emitter saturation voltage
V
CE(sat)
=-0.2v typ (@I
C
=-500mA, I
B
=-10mA)
High h
FE
: h
FE
=400 to 800
Small package for mounting
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
V
CBO
V
EBO
V
CEO
I
CM
I
C
P
C
T
j
T
stg
Rating
-50
-6
-50
-2
-1
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
-50
-6
-50
-0.1
-0.1
400
-0.2
90
30
800
-0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
=-10ìA,I
E
=0
V
(BR)EBO
I
E
=-10ìA,I
C
=0
V
(BR)CEO
I
C
=-1mA,R
BE
=
I
CBO
I
EBO
h
FE
V
CB
=-40V,I
E
=0
V
EB
=-2V,I
C
=0
V
CE
=-6V,I
C
=-100mA
V
CE(sat)
I
C
=-500mA,I
B
=-10mA
f
T
C
ob
V
CE
=-10V,I
E
=-10mA
V
CB
=-10V,I
E
=0,f=1MHz
Marking
Marking
XG
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
