SMD Type
IC
Product specification
2SA1948
Features
High f
T
f
T
=200MHz typ, low C
ob
C
ob
=3.5pF typ
Small package for mounting
High voltage V
CEO
=120V
High collector dissipation Pc=500mW
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-120
-120
-5
-100
500
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Gain band width product
Collector output capacitance
Symbol
Testconditons
Min
-120
-120
-5
-0.1
-0.1
150
-0.17
200
3.5
800
-0.6
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR) CBO
I
C
= -10 ìA, I
E
= 0
V
(BR) CEO
I
C
= -1 mA,R
BE
=
V
(BR) EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
V
CB
= -100 V, I
E
= 0
V
EB
= -4 V, I
C
= 0
V
CE
= -10 V, I
C
= -10 mA
I
C
= -50 mA, I
B
= -2.5 mA
V
CE
= -10 V, I
E
= 10 mA
V
CB
=-10V,I
E
=0,f=1MHz
h
FE
Classification
Marking
Rank
hFE
ACE
E
150 300
250
ACF
F
500
400
ACG
G
800
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
