SMD Type
Transistors
Product specification
2SA1971
Features
High voltage: V
CE
= -400 V
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(pulse)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
* Mounted on ceramic substrate (250 mm
2
X 0.8 t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Tj
T
stg
Rating
-400
-400
-7
-0.5
-1
-0.25
500
1000 *
150
-55 to +150
Unit
V
V
V
A
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
Testconditons
V
CB
=-400V, I
E
=0
V
EB
=-7V,I
C
=0
-400
140
140
-0.4
-0.76
35
18
0.2
2.3
0.2
450
400
-1
-0.9
V
V
MHz
pF
ìs
ìs
ìs
Min
Typ
Max
-10
-1
Unit
ìA
ìA
V
V
(BR)CEO
I
C
=-10mA, I
B
=0
h
FE
V
CE
=-5V,I
C
=-20mA
V
CE
=-5V,I
C
=-100mA
V
CE (sat)
I
C
=-100mA,I
B
=-10mA
V
BE (sat)
I
C
=-100mA,I
B
=-10mA
f
T
C
ob
t
on
t
stg
t
f
V
CE
=-5V,I
C
=-50mA
V
CB
=-10V,I
E
=0,f=1MHz
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