SMD Type
Product specification
2SA1980UF
Features
Low collector saturation voltage.
Low output capacitance.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-50
-50
-5
-150
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise figure
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Testconditons
I
C
=-100ìA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10ìA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
70
Min
-50
-50
-5
-0.1
-0.1
700
-0.3
80
4
7
10
V
MHz
pF
dB
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
f
T
C
ob
NF
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V,I
C
=-0.1mA,f=1KHz,Rg=10KÙ
h
FE
Classification
Marking
Rank
hFE
O
70 140
Y
120 240
C
G
200 400
L
300 700
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TYSEMI [ TY Semiconductor Co., Ltd ]
