欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SA1981SF 参数 Datasheet PDF下载

2SA1981SF图片预览
型号: 2SA1981SF
PDF下载: 下载PDF文件 查看货源
内容描述: 高HFE : .hFE = 100〜 320集电极 - 基极电压VCBO -35 V [High Hfe:.hFE=100 to 320 Collector-base voltage VCBO -35 V]
分类和应用:
文件页数/大小: 1 页 / 75 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
2SA1981SF
SOT-23
Unit: mm
Features
3
+0.1
2.9
-0.1
+0.1
0.4
-0.1
High Hfe:.h
FE
=100 to 320
+0.1
2.4
-0.1
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-35
-30
-5
-800
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
IC
=-500ìA
Testconditons
, I
E
=0
Min
-35
-30
-5
0-0.1
Typ
Max
Unit
V
V
V
I
C
=-1mA , I
B
=0
I
E
=-50ìA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
-0.1
-0.1
100
320
-0.5
120
19
ìA
ìA
V
CE(sat)
I
C
/I
B
=-500mA/-20mA
f
T
C
ob
V
CE
=-5V, I
E
=10mA,
V
CB
=-10V, I
E
=0, f=1MHz
V
MHz
pF
h
FE
Classification
Marking
Rank
hFE
O
100 200
EA
Y
160 320
1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1