Product specification
2SA811A
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
High DC current gain.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-120
-120
-5
-50
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -120V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
C
= -0.1mA
V
CE(sat)
I
C
= -10mA , I
B
= -1mA
V
BE
f
T
C
ob
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
E
= 1mA
V
CB
= -30V , I
E
= 0 , f = 1.0MHz
135
100
500
500
-0.09 -0.30
-0.55 -0.61 -0.65
50
90
2.0
3.0
V
V
MHz
pF
Min
Typ
Max
-50
-50
900
Unit
nA
nA
h
FE
Classification
Marking
hFE
C15
135 270
C16
200 400
C17
300 600
C18
450
900
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.1
0.38
-0.1
0-0.1
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
