Product specification
2SA812
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High Voltage: V
CEO
= -50 V
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
High DC Current Gain: h
FE
= 200 TYP. (V
CE
= -6.0 V, I
C
= -1.0 mA)
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-60
-50
-5.0
-100
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base to emitter voltage
Output capacitance
Transition frequency
* Pulsed: PW
350
s, Duty Cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -60 V, I
E
= 0 A
V
EB
= -5.0 V, I
C
= 0 A
V
CE
= -6.0 V, I
C
= -1.0 mA
90
200
-0.18
-0.58
-0.62
4.5
180
Min
Typ
Max
-0.1
-0.1
600
-0.3
-0.68
V
V
pF
MHz
Unit
A
A
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
V
BE
C
ob
f
T
V
CE
= 6.0 V, I
C
= -1.0 mA
V
CE
= -10 V, I
E
= 0 A, f = 1.0 MHz
V
CE
= -6.0 V, I
E
= 10 mA
h
FE
Classification
Marking
h
FE
90
M4
180
M5
135
270
M6
200
400
M7
300
600
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
