Product specification
2SB1001
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. PW
10 ms; d
0.02.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
1
P
C
*
2
Tj
T
stg
Rating
-20
-16
-6
-2
-3
1
150
-55 to +150
Unit
V
V
V
A
A
W
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
-20
-16
-6
-0.1
-0.1
100
-0.15
-1
150
50
320
-0.3
-1.2
V
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CB
= -16 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -2 V,I
C
= -0.1 A
V
CE(sat)
I
C
= -1 A,I
B
= -0.1 A
V
BE(sat)
I
C
= -1 A,I
B
= -0.1 A
f
T
C
ob
V
CE
= -2 V,I
C
= -10 mA
V
CB
= -10 V, I
E
= 0,f = 1 MHz
h
FE
Classification
Marking
hFE
BH
100 200
BJ
160 320
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
