Product specification
2SB1120
Features
Low collector-to-emitter saturation voltage :
V
CE(sat)
max=-0.45V.
Large current capacity : I
C
=-2.5A, I
CP
=-5A.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-20
-10
-7
-2.5
-5
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
Testconditons
V
CB
= -16V , I
E
= 0
V
CB
= -4V , I
E
= 0
V
CE
= -2V , I
C
= -500mA
V
CE
=-2V
I
C
=-3A
100
70
250
-0.25 -0.45
-20
-10
-7
70
MHz
V
V
V
V
pF
Min
Typ
Max
-100
-100
560
Unit
nA
nA
V
CE
= -10V , I
C
= -50mA
V
CE(sat)
I
C
= -1.5A , I
B
= -0.15A
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
C
ob
V
CB
= -10V , f = 1MHz
h
FE
Classification
Marking
Rank
hFE
E
100 200
BC
F
160 320
G
280 560
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TYSEMI [ TY Semiconductor Co., Ltd ]
