Product specification
2SB1124
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -40V , I
E
= 0
V
CB
= -4V , I
E
= 0
V
CE
= -2V , I
C
= -100mA
V
CE
= -10V , I
C
= -50mA
V
CB
= -10V , f = 1MHz
100
150
39
-0.35
-0.94
-60
-50
-6
70
-0.7
-1.2
Min
Typ
Max
-1
-1
560
MHz
pF
V
V
V
V
V
ns
Unit
ìA
ìA
V
CE(sat)
I
C
= -2A , I
B
= -100mA
V
BE(sat)
I
C
= -2A , I
B
= -100mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
ton
Storage time
tstg
450
ns
Fall time
tf
35
ns
h
FE
Classification
Marking
Rank
hFE
100
R
200
140
S
280
200
BG
T
400
280
U
560
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
