Product specification
2SB1188
Features
Low V
CE(sat)
.
V
CE(sat)
= -0.5V (Typ.)
(I
C
/I
B
= -2A / -0.2A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
* PW=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP *
P
C
T
j
T
stg
Rating
-40
-32
-5
-2
-3
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
= -50 A
I
C
= -1mA
I
E
= -50 A
V
CB
= -20V
V
EB
= -4V
-0.5
82
100
50
Testconditons
Min
-40
-32
-5
-1
-1
-0.8
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
= -2A , I
B
= -0.2A
h
FE
f
T
C
ob
V
CE
= -3V , I
C
= -0.5A
V
CE
= -5V , I
E
= 0.5A , f = 30MHz
V
CB
= -10V , I
E
= 0, f = 1MHz
h
FE
Classification
Marking
Rank
hFE
P
82 180
BC
Q
120 270
R
180 390
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TYSEMI [ TY Semiconductor Co., Ltd ]
