Product specification
2SB1189
Features
High breakdown voltage, BVCEO=-80V, and
high current, IC=-0.7A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-80
-80
-5
-0.7
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
= -50 A
I
C
= -2mA
I
E
= -50 A
V
CB
= -50V
V
EB
= -4V
-0.2
82
100
14
20
Testconditons
Min
-80
-80
-5
-0.5
-0.5
-0.4
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
= -500mA , I
B
= -50mA
h
FE
f
T
C
ob
V
CE
= -3V , I
C
= -0.1A
V
CE
= -10V , I
E
= 50mA , f = 100MHz
V
CB
= -10V , I
E
= 0, f = 1MHz
h
FE
Classification
Marking
Rank
hFE
P
82 180
BD
Q
120 270
R
180 390
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TYSEMI [ TY Semiconductor Co., Ltd ]
