Product specification
2SB1197K
Features
Low V
CE(sat)
.V
CE(sat)
I
C
= -0.8A.
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
PNP silicon transistor
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
-0.5V
I
C
/ I
B
= -0.5A / -50mA
.
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-40
-32
-5
-0.8
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Output Capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
I
C
= -50
I
C
= -1mA
I
E
= -50
A
A
Testconditons
Min
-40
-32
-5
-0.5
-0.5
-0.5
120
12
200
390
30
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
V
CB
= -20V
V
EB
= -4V
V
CE(sat)
I
C
= -0.5A , I
B
= -50mA
h
FE
C
ob
f
T
V
CE
= -3V , I
C
= -100mA
V
CB
= -10V , I
E
= 0A , f = 1MHz
V
CE
= -5V , I
E
= 50mA , f = 100MHz
h
FE
Classification
Marking
Rank
hFE
120
AHQ
Q
270
180
AHR
R
390
+0.1
0.38
-0.1
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
