Product specification
2SB1218
Features
High forward current transfer ratio h
FE
.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
-45
-45
-7
-200
-100
150
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -2 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -20 V, I
E
= 0
V
CE
= -10 V, I
B
= 0
V
CE
= -10 V, I
C
= -2 mA
160
-0.3
80
2.7
Min
-45
-45
-7
-0.1
-100
460
-0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
f
T
C
ob
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
Rank
h
FE
BQ
Q
160 260
BR
R
210 340
BS
S
290 460
B
No-rank
160 460
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TYSEMI [ TY Semiconductor Co., Ltd ]
