Product specification
2SB1220
Features
High collector-emitter voltage V
CEO
Low noise voltage NV
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
-150
-150
-5
-100
-50
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noixe voltage
Symbol
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= -100 ìA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -100 V, I
E
= 0
V
CE
= -5 V, I
C
= -10 mA
130
Min
-150
-5
-1
450
-1
200
4
150
V
MHz
pF
mV
Typ
Max
Unit
V
V
ìA
V
CE(sat)
I
C
= -30 mA, I
B
= -3 mA
f
T
C
ob
NV
V
CB
= -10 V, I
E
= 10 mA, f = 200 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
CE
= -10 V, I
C
= -1 mA, G
V
= 80 dB,
R
g
= 100KÙ
,
Function = FLAT
h
FE
Classification
Marking
Rank
h
FE
R
130 220
I
S
185 330
T
260 450
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TYSEMI [ TY Semiconductor Co., Ltd ]
