Product specification
2SB1260
Features
High breakdown voltage and high
current.BV
CEO
= -80V, I
C
=-1A
Good hFE linearity.
Low V
CE(sat)
.
Epitaxial planar type
PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
Tj
T
stg
Rating
-80
-80
-5
-1
-2
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-60V
V
EB
=-4V
V
CE
=-3V, I
C
=-0.1A
82
Testconditons
Min
-80
-80
-5
-1
-1
390
-0.4
100
25
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=-500mA,I
B
=-50mA
C
ob
f
T
V
CE
=-5V, I
E
=50mA, f=30MHz
V
CB
=-10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
P
82 180
BE
Q
120 270
R
180 390
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TYSEMI [ TY Semiconductor Co., Ltd ]
