Product specification
2SB1266
TO-252
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Suitable for sets whose heighit is restricted.
High reliability.
+0.2
9.70
-0.2
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
T
C
= 25
Jumction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
-60
-60
-6
-3
-8
1.65
30
150
-55 to +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -40V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -5V , I
C
= -0.5A
V
CE
= -5V , I
C
= -3A
V
CE
= -5V , I
C
= -0.5A
V
CB
= -10V , f = 1MHz
70
20
8
60
-0.4
-0.7
-60
-60
-6
-1
-1
MHz
pF
V
V
V
V
V
Min
Typ
Max
-100
-100
280
Unit
ìA
ìA
V
CE(sat)
I
C
= -2A , I
B
= -0.2A
V
BE
I
CE
= -5V , I
C
= -0.5A
V
(BR)CBO
I
C
= -1mA , I
E
= 0
V
(BR)CEO
I
C
= -5mA , R
BE
=
V
(BR)EBO
I
E
= -1mA , I
C
= 0
h
FE
Classification
Rank
hFE
Q
70 140
R
100 200
S
140 280
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
