Product specification
2SB1295
SOT-23
Unit: mm
Features
Large current capacity.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
smaller and slimer.
0.55
Very small-sized package permitting sets to be made
+0.1
1.3
-0.1
Low collector to emitter saturation voltage.
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-15
-15
-5
-0.8
-3
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -12V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -2V , I
C
= -50mA
V
CE
= -2V , I
C
= -50mA
V
CB
= -10V , f = 1MHz
135
300
15
-10
-100
-0.9
-15
-15
-5
-25
-200
-1.2
Min
Typ
Max
-100
-100
600
MHz
pF
mV
mV
V
V
V
V
Unit
nA
nA
V
CE(sat)
I
C
= -5mA , I
B
= -0.5mA
V
CE(sat)
I
C
= -400mA , I
B
= -20mA
V
BE(sat)
I
C
= -400mA , I
B
=-20mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
h
FE
Classification
Marking
Rank
hFE
135
5
270
200
UL
6
400
300
7
600
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
