Product specification
2SB1308
Features
Low saturation voltage, typically
V
CE(sat)
= -0.45V (Max.) at I
C
/I
B
= -1.5A / -0.15A.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
Tj
T
stg
Rating
-30
-20
-6
-3
-5
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-20V
V
EB
=-5V
V
CE
=-2V, I
C
=-0.5A
82
Testconditons
Min
-30
-20
-6
-0.5
-0.5
390
-0.45
120
60
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=-1.5A,I
B
=-0.15A
C
ob
f
T
V
CE
=-6V, I
E
=50mA, f=100MHz
V
CB
=-20V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
P
82 180
BF
Q
120 270
R
180 390
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TYSEMI [ TY Semiconductor Co., Ltd ]
