Product specification
2SB1407S
TO-252
Features
Low frequency power amplifier.
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
T
stg
Rating
-35
-35
-5
-2.5
-3
18
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Symbol
Testconditons
Min
-35
-35
-5
-20
60
20
-1.5
-1.0
V
V
320
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= -1 mA, I
E
= 0
V
(BR)CEO
I
C
= -10 mA, R
BE
=
V
(BR)EBO
I
E
= -1 mA, I
C
= 0
I
CBO
h
FE
V
BE
V
CB
= -35 V, I
E
= 0
V
CE
= -2 V,I
C
= -0.5 A
V
CE
= -2 V,I
C
= -1.5 A
V
CE
= -2 V,I
C
= -1.5 A
V
CE(sat)
I
C
= -2 A,I
B
= -0.2 A
h
FE
Classification
Rank
hFE
B
60 120
C
100 200
D
160 320
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
