Product specification
2SB1409S
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 Value at T
C
= 25 .
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*1
T
j
T
stg
Rating
-180
-160
-5
-1.5
-3
18
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
* Pulse test.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Testconditons
I
C
= -1 mA, I
E
= 0
I
C
= -10 mA, R
BE
=
I
E
= -1 mA, I
C
= 0
V
CB
= -160 V, I
E
= 0
V
CE
= -5 V, I
C
= -150 mA*
V
CE
= -5 V, I
C
= -500 mA*
I
C
= -500 mA, I
B
= -50 mA
V
CE
= -5 V, I
C
= -150 mA
V
CE
= -5 V, I
C
= -150 mA
V
CB
= -10 A, I
E
= 0, f = 1 MHz
240
25
60
30
-1
-1.5
V
V
MHz
pF
Min
-180
-160
-5
-10
200
Typ
Max
Unit
V
V
V
ìA
h
FE
Classification
TYPE
hFE
B
60 to 120
C
100 to 200
3
.8
0
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
