Product specification
2SB1424
Features
Low V
CE(sat)
. V
CE(sat)
= -0.2V (Typ.) (I
C
/I
B
= -2A / -0.1A)
Excellent DC current gain characteristics.
PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* Single pulse Pw=10ms.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
j
T
stg
Rating
-20
-20
-6
-3
-5
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
Ic
BO
I
EBO
h
FE
I
C
= -50ìA
I
C
= -1mA
I
E
= -50ìA
V
CB
= -20V
V
EB
= -5V
V
CE
=-2V, I
C
= -0.1A
120
Testconditons
Min
-20
-20
-6
-0.1
-0.1
390
-0.5
35
240
V
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
CE(sat)
I
C
/I
B
= -2A/ -0.1A
C
ob
f
T
V
CB
= -10V, I
E
=0A, f=1MHz
V
CE
= -2V, I
E
=0.5A, f=100MHz
h
FE
Classification
Marking
Rank
hFE
AEQ
Q
120 270
AER
R
180 390
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
