SMD Type
Transistors
IC
Product specification
2SB1539
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
-20
-20
-5
-1.2
-1
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
Testconditons
V
CB
= -7 V, I
E
= 0
I
C
= -10 ìA, I
E
= 0
I
C
= -1 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CE
= -2 V, I
C
= -100 mA
-20
-20
-5
200
800
-0.2
120
30
V
MHz
pF
Min
Typ
Max
-1
Unit
ìA
V
V
V
V
CE(sat)
I
C
= -500 mA, I
B
= - 10 mA
f
T
C
ob
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
V
CB
= -10V, I
E
= 0, f = 1 MHz
Marking
Marking
1N
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