Product specification
2SB709A
Features
High forward current transfer ratio h
FE
.
Mini type package, allowing downsizing of the equipment and
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
packing.
+0.1
1.3
-0.1
automatic insertion through the tape packing and the magazine
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-45
-45
-7
-100
-200
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base current
Collector-emitter current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -2 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -20 V, I
E
= 0 A
V
CE
= -10 V, I
B
= 0 A
V
CE
= -10 V, I
C
= -2 mA
160
-0.3
80
2.7
Min
-45
-45
-7
-0.1
-100
460
-0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
f
T
C
ob
V
CB
= -10 V, I
E
= 1 mA , f = 200 MHz
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
h
FE
Classification
Marking
h
FE
BQ
160 260
BR
210 340
BS
290 460
0-0.1
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sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
