Product specification
2SB736
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Micro package.
Complementary to 2SD780.
High DC Current Gain: h
FE
= 200 TYP. (V
CE
= -1.0 V, I
C
= -50 mA)
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-60
-60
-5.0
-300
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage *
Output capacitance
Gain bandwidth product
* Pulsed: PW
350 µs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
V
BE
Testconditons
V
CB
= -50 V, I
E
= 0
V
EB
= -5.0 V, I
C
= 0
V
CE
= -1.0 V, I
C
= -50 mA
V
CE
= 6.0 V, I
C
= -10 mA
110
-600
-660
-0.35
13
100
Min
Typ
Max
-100
-100
400
-700
-0.6
mV
V
pF
MHz
Unit
nA
nA
V
CE(sat)
I
C
= -300 mA, I
B
= -30 mA
C
ob
f
T
V
CB
= -6.0 V, I
E
= 0 , f = 1.0 MHz
V
CE
= -6.0 V, I
E
= 10 mA
h
FE
Classification
Marking
h
FE
BW1
110 180
BW2
135 220
BW3
170 270
BW4
200 320
BW5
250 400
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
