SMD Type
Product specification
2SB767
Features
Large collector power dissipation PC
High collector-emitter voltage (Base open) VCEO
Mini type package, allowing downsizing of the equipment and automatic
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-80
-80
-5
-1
-0.5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
Testconditons
V
CB
= -20 V, I
E
= 0
I
C
= -10ìA, I
E
= 0
I
C
= -100ìA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CE
= -10 V, I
C
= -150 mA
-80
-80
-5
90
-0.2
0.85
120
20
30
220
-0.4
-1.2
V
V
MHz
pF
Min
Typ
Max
-0.1
Unit
ìA
V
V
V
V
CE(sat)
I
C
= -300 mA, I
B
= -30 mA
V
BE(sat)
I
C
= -300 mA, I
B
= -30 mA
f
T
C
ob
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
h
FE
CQ
90 155
CR
130 220
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
