Product specification
2SB792,2SB792A
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High collector-emitter voltage V
CEO
Low noise voltage NV
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
2SB792
2SB792A
Collector-emitter voltage
2SB792
2SB792A
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
EBO
I
C
I
CP
P
C
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
-150
-185
-150
-185
-5
-50
-100
200
150
-55 to +150
Unit
V
V
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
2SB792
2SB792A
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
2SB792
2SB792A
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
V
CE(sat)
I
C
= -30 mA, I
B
= -3 mA
f
T
C
ob
NV
V
CE
= -10 V, I
C
= -10 mA, f = 200 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
CE
= -10 V, I
C
= -1 mA, G
V
= 80 dB
Rg = 100KÙ, Function = FLAT
200
4
150
V
EBO
I
CBO
h
FE
I
E
= -10 ìA, I
C
= 0
V
CB
= -100 V, I
E
= 0
V
CE
= -5 V, I
C
= -10 mA
130
130
Symbol
V
CEO
Testconditons
I
C
= -100 ìA, I
B
= 0
Min
-150
-185
-5
-1
450
330
-1
V
MHz
pF
mV
Typ
Max
Unit
V
V
V
ìA
h
FE
Classification
Marking
Rank
h
FE
2SB792
2SB792A
IR
2FR
R
130 220
IS
2FS
S
185 330
T
260 450
IT
+0.1
0.38
-0.1
0-0.1
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
