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2SB799 参数 Datasheet PDF下载

2SB799图片预览
型号: 2SB799
PDF下载: 下载PDF文件 查看货源
内容描述: 低集电极饱和电压VCE (SAT) \u003c - 0.4V (IC = -500mA , IB = -50mA ) [Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)]
分类和应用: 晶体晶体管放大器
文件页数/大小: 1 页 / 76 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
2SB799
Features
World standard miniature package:SOT-89
Low collector saturation voltage:V
CE(sat)
<-0.4V(I
C
=-500mA,I
B
=-50mA)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* PW
10ms,duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-60
-50
-5
-0.7
-1.0
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -60 V, I
E
= 0
V
EB
= -5.0 V, I
C
= 0
V
CE
= -1.0 V, I
C
= -100 mA
V
CE
= -1.0 V, I
C
= -500 mA
V
CE(sat)
I
C
= -500mA, I
B
= -50mA
V
BE(sat)
I
C
= -500mA, I
B
= -50mA
V
BE
f
T
C
ob
V
CE
= -6.0 V, I
C
= -10 mA
V
CE
= -6.0 V, I
E
= 10 mA
V
CB
= -6.0 V, I
E
= 0 , f = 1.0 MHz
-600
90
50
200
120
-0.16
-0.9
-630
120
25
-0.4
-1.2
-700
V
V
mV
MHz
pF
Min
Typ
Max
-100
-100
400
Unit
nA
nA
h
FE
Classification
Marking
h
FE
MM
90 180
ML
135 270
MK
200 400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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