Product specification
2SB806
ST8
O-9
4.50±0.1
1.80±0.1
U½½½:½½
1.50 ±0.1
●
High collector to emitter voltage: V
CEO
>-120V.
1
2
3
08±01
.0 .
25±01
.0 .
40±01
.0 .
■
Features
0.44±0.1
26±01
.0 .
04±01
.0 .
0.48±0.1 0.53±0.1
3.00±0.1
1.B½½½
2.C½½½½½½½½
3.E½½½½½½
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Collector power dissipation
Junction temperature
Storage temperature
*1. PW≤10ms,duty cycle≤50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(pu)
P
c
T
j
T
stg
Rating
-120
-120
-5
-0.7
-1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transition frequency
* PW≤350µs,duty cycle≤2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -120V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V , I
C
= -100mA
V
CE
=-1V , I
C
= -5.0mA
V
CE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE
C
ob
f
T
V
CE
=-10V , I
C
= -10mA
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
V
CE
= -10V , I
E
= 10mA
-550
90
45
200
200
-0.4
-0.9
-620
14
75
-0.6
-1.5
-650
V
V
mV
pF
MHz
Min
Typ
Max
-100
-100
400
Unit
nA
nA
■
h
FE
Classification
Marking
hFE
KR
90½180
KQ
135½270
KP
200½400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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