Product specification
2SB815
SOT-23
Unit: mm
Features
Ultrasmall package allows miniaturization in end products.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
1.3
-0.1
Large current capacity (I
C
=0.7A) and low-saturation voltage.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-20
-15
-5
-0.7
-1.5
200
125
-55 to +125
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Symbol
Ic
BO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -15V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -2V , I
C
= -50mA
V
CE
= -10V , I
C
= -50mA
V
CB
= -10V , f = 1MHz
200
250
13
-15
-60
-35
-120
Min
Typ
Max
-0.1
-0.1
600
MHz
pF
mV
mV
Unit
ìA
ìA
V
CE(sat)
I
C
= -5mA , I
B
= -0.5mA
V
CE(sat)
I
C
= -100mA , I
B
= -10mA
h
FE
Classification
Marking
hFE
B6
200
400
B7
300
600
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
