Product specification
2SB852
■
Features
●
Darlington connection for high DC current gain.
●
Built-in 4kΩ resistor between base and emitter.
+0.1
2.4
-0.1
+0.1
1.3
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
C
0.4
3
+0.05
0.1
-0.01
B
0.97
1 Base
2 Emitter
R
BE
4kΩ
+0.1
0.38
-0.1
+0.1
-0.1
E
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation(
TOTAL
)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-40
-32
-6
-300
200
150
-55 to 150
Unit
V
V
V
mA
mW
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
Min
-40
-32
-6
-1
-1
5000
-1.5
200
3
V
MHz
PF
Typ
Max
Unit
V
V
V
μA
μA
V
(BR)CBO
Ic= -100μA, I
E
=0
V
(BR)CEO
Ic= -1 mA， I
B
=0
V
(BR)EBO
I
E
= -100 μA，
I
C
=0
Ic
BO
I
EBO
h
FE
V
CB
= -24 V , I
E
=0
V
CE
= -4.5V , I
C
=0
V
CE
= -5V, I
C
= -100mA
V
CE(sat)
I
C
=-200 mA, I
B
= -0.4mA
f
T
C
ob
V
CE
= -5V, I
C
= -10mA,f=100MHz
V
CB
=-10V, I
E
=0A, f=1MHz
■
Marking
Marking
U
*
0-0.1
3 Collector
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
