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2SB906 参数 Datasheet PDF下载

2SB906图片预览
型号: 2SB906
PDF下载: 下载PDF文件 查看货源
内容描述: 低集电极饱和电压。高功率耗散。 [Low collector saturation voltage. High power dissipation.]
分类和应用: 晶体晶体管放大器
文件页数/大小: 1 页 / 62 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
2SB906
TO-252
+0.15
1.50
-0.15
Features
Low collector saturation voltage.
High power dissipation.
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
-60
-60
-7
-3
-0.5
1
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -60 V, I
E
= 0
V
EB
= -7 V, I
C
= 0
-60
60
20
-1
-1
9
150
0.4
-I
B1
=I
B2
=0.2A,V
CC
=-30V,duty cycle1%
1.7
0.5
-1.7
-1.5
V
V
MHz
pF
ìs
ìs
ìs
200
Min
Typ
Max
-100
-100
Unit
ìA
ìA
V
V
(BR)CEO
I
C
=-50mA, I
B
=0
h
FE
V
CE
= -5 V, I
C
= -0.5 A
V
CE
= -5 V, I
C
= -3 A
V
CE (sat)
I
C
= -3 A, I
B
= -0.3 A
V
BE
f
T
C
ob
t
on
t
stg
t
f
V
CE
= -5V, I
C
=-0.5 A
V
CE
= -5V, I
C
=-0.5 A
V
CB
= -10V, I
E
= 0, f = 1 MHz
h
FE
Classification
Rank
hFE
O
60 120
Y
100 200
3
.8
0
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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