Product specification
2SB928A
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High collector to emitter V
CEO
High collector power dissipation P
C
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
T
C
=25
Ta=25
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Rating
-200
-180
-6
-3
-2
30
1.3
150
-55 to 150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
Testconditons
V
CB
= -200V, I
E
= 0
V
EB
= -4V, I
C
= 0
I
C
= -500ìA, I
E
= 0
I
C
= -5mA, I
B
= 0
I
E
= -500ìA, I
C
= 0
V
CE
= -10V, I
C
= -150mA
V
CE
= -10V, I
C
= -400mA
V
CE
= -10V, I
C
= -400mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -10V, I
C
= -0.5A, f = 10MHz
30
-200
-180
-6
60
50
-1
-1
V
V
MHz
240
Min
Typ
Max
-50
-50
Unit
ìA
ìA
V
V
V
h
FE
Classification
Rank
hFE
Q
60 to 140
P
100 to 240
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
