Product specification
2SB930A
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2
9.70
-0.2
Low collector-emitter saturation voltage V
CE(sat).
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-80
-80
-5
-4
-8
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CES
I
CEO
I
EBO
h
FE
V
BE
Testconditons
I
C
= -30 mA, I
B
= 0
V
CE
= -80 V,V
BE
= 0
V
CE
= -60 V,I
B
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -4 V, I
C
= -1 A
V
CE
= -4 V, I
C
= -3 A
V
CE
= -4 V, I
C
= -3 A
70
15
-2
-1.5
20
0.2
I
C
= -4 A,I
B1
= -0.4 A,I
B2
= 0.4 A,
V
CC
= -50 V
0.5
0.2
V
V
MHz
ìs
ìs
ìs
Min
-80
-400
-700
-1
250
Typ
Max
Unit
V
ìA
ìA
mA
V
CE(sat)
I
C
= -4 A, I
B
= -0.4 A
f
T
t
on
t
stg
t
f
V
CE
= -10 V, I
C
= -0.5 A , f = 10 MHz
h
FE
Classification
Rank
h
FE
Q
70 150
P
120 250
3
.8
0
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