Product specification
2SB935
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low collector-emitter saturation voltage V
CE(sat).
High-speed switching.
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-40
-20
-5
-10
-15
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff curent
Emitter-base cutoff current
Collector-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE
Testconditons
V
CB
= -40 V,I
E
= 0
V
EB
= -5 V, I
C
= 0
I
C
= -10mA, I
B
= 0
V
CE
= -2 V, I
C
= -2 A
V
CE
= -2 V, I
C
= -0.1 A
V
CE(sat)
I
C
= -7 A, I
B
= -0.23 A
V
BE(sat)
I
C
= -7 A, I
B
= -0.23 A
f
T
C
ob
t
on
t
stg
t
f
I
C
= -2 A,I
B1
= -66 mA,I
B2
= 66 mA
V
CE
= -10 V, I
E
= -0.5 A , f = 10 MHz
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
150
200
0.1
0.5
0.1
-20
90
45
-1.5
-0.6
V
V
MHz
pF
ìs
ìs
ìs
260
Min
Typ
Max
-50
-50
Unit
ìA
ìA
V
V
h
FE
Classification
Rank
h
FE
Q
90 180
P
130 260
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
