Product specification
2SB970
SOT-23
Unit: mm
Features
Low collector-emitter saturation voltage V
CE(sat)
.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
insertion through the tape packing and the magazine packing.
+0.1
1.3
-0.1
Mini type package,allowing downsizing of the equipment and automatic
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-15
-10
-7
-.5
-1
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* Pulse measurement.
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -1 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -10 V, I
E
= 0
V
CE
= -2 V, I
C
= -0.5A
130
-0.16
-0.8
130
22
Min
-15
-10
-7
-100
350
-0.3
-1.2
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
V
CE(sat)
I
C
= -0.4 A, I
B
= -8 mA
V
BE(sat)
I
C
= -0.4 A, I
B
= -8 mA
f
T
C
ob
V
CB
= -10 V, I
E
= 50 mA , f = 200 MHz
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
h
FE
Classification
Marking
Rank
h
FE
R
130 220
1R
S
180 350
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
