Product specification
2SC1621
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
High speed : t
stg
=20ns MAX.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
40
20
5
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 30V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 0.5V , I
C
= 1mA
40
80
0.13
0.74
200
500
3.0
12
See Test Circuit
7
18
6.0
20
20
40
Min
Typ
Max
100
100
180
0.25
0.85
V
V
MHz
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= 10mA , I
B
= 1mA
V
BE(sat)
I
C
= 10mA , I
B
= 1mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= 10V , I
E
= -10mA
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
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4008-318-123
0-0.1
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
