Product specification
2SC1653
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
High voltage V
CEO :
130V
+0.1
1.3
-0.1
High DC current gain.h
FE
=130 typ.(V
CE
=3.0V,I
C
=15mA)
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Rating
150
130
5
50
150
125
-55 to +125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transiston frequency
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 130V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=3V , I
C
= 15mA
V
CE
=3V , I
C
= 1mA
V
CE(sat)
I
C
= 50mA , I
B
= 5mA
V
BE(sat)
I
C
= 50mA , I
B
= 5mA
C
ob
f
T
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
V
CE
= 10V , I
E
= -10mA
90
70
200
180
0.1
0.73
2.3
120
0.3
1.0
V
V
pF
MHz
Min
Typ
Max
0.1
0.1
400
Unit
A
A
h
FE
Classification
Marking
hFE
90
N2
180
N3
135
270
N4
200
400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
0-0.1
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
