Product specification
2SC2223
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
High gain bandwidth product f
T
=600MHz TYP
Low output capacitance.
C
ob
=1.0PF TYP
0.55
Micro package.
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
30
20
4
20
150
125
-55 to +125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base-emitter voltage
Collector-emitter saturation voltage
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
BE
Testconditons
V
CB
= 25V, I
E
=0
V
EB
= 3.0V, I
C
=0
V
CE
= 6.0V , I
C
= 1mA
I
C
= 10mA , I
B
= 1.0mA
40
90
0.72
0.1
400
600
1.0
12
3
0.3
Min
Typ
Max
100
100
180
V
V
MHz
pF
ps
dB
Unit
nA
nA
V
CE(sat)
I
C
= 10mA , I
B
= 1.0mA
f
T
C
ob
C
c-rb'b
NF
V
CE
= 6.0V , I
E
= -1.0mA
V
CB
= 6.0V , I
E
= 0 , f = 1.0MHz
V
CE
= 6.0V, I
E
= -1.0mA, f = 31.9MHz
V
CE
= 6.0V, I
E
= -1.0mA, R
G
= 50Ù,
f = 100MHz
h
FE
Classification
Marking
h
FE
F12
40 80
F13
60 120
F14
90 180
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
