Product specification
2SC2412
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Low C
ob
.C
ob
=2.0pF (Typ.)
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
60
50
7
0.15
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Collector Output Capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
120
Testconditons
Min
60
50
7
0.1
0.1
560
0.4
2
180
3.5
V
pF
MHz
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
/I
B
=50mA/5mA
C
ob
f
T
V
CE
=12V, I
E
=0A, f=1MHz
V
CE
=12V, I
E
=-2mA, f=100MHz
■
h
FE
Classification
Marking
Rank
h
FE
BQ
Q
120½270
BR
R
180½390
BS
S
270½560
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
