Product specification
2SC2881
Features
High Voltage : V
CEO
= 120V
High Transition Frequency : f
T
= 120MHz(typ.)
Small Flat Package
Complementary to 2SA1201
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature
* Mounted on a ceramic substrate (250 mm
2
x 0.8 t)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
120
120
5
800
160
500
1000
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Emitter Cut-off Current
Collector Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transtion Frequency
Collector Output Capacitance
Symbol
I
EBO
I
CBO
Testconditons
V
EB
= 5V , I
C
= 0
V
CB
= 120V , I
E
= 0
120
5
80
240
1
1
120
30
V
V
MHz
pF
Min
Typ
Max
0.1
0.1
Unit
A
A
V
V
V
(BR)CEO
I
C
= 10mA , I
B
= 0
V
(BR)EBO
I
E
= 1mA , I
C
= 0
h
FE
V
CE
= 5V , I
C
= 100mA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE
f
T
C
ob
V
CE
= 5V , I
C
= 500mA
V
CE
= 5V , I
C
= 100mA
V
CB
= 10V , I
E
= 0 , f = 1MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
