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2SC2982 参数 Datasheet PDF下载

2SC2982图片预览
型号: 2SC2982
PDF下载: 下载PDF文件 查看货源
内容描述: 低饱和电压: VCE (SAT) = 0.5V (最大值) ( IC = 2A , IB = 50毫安)小型扁平封装 [Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 2 页 / 379 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC2982的Datasheet PDF文件第2页  
SMD Type
Product specification
2SC2982
Features
Low Saturation Voltage
: V
CE(sat)
= 0.5V (max) (I
C
= 2A, I
B
= 50mA)
Small Flat Package
Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulsed) *1
Base Current (DC)
Base Current (Pulse) *1
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
P
C
*2
T
j
T
stg
Rating
20
10
6
2
4
0.4
0.8
500
1000
150
-55 to +150
Unit
V
V
V
A
A
A
A
mW
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on a ceramic substrate (250 mm
2
x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 30V , I
E
= 0
V
EB
= 6V , I
C
= 0
10
6
140
70
140
0.2
0.86
150
27
0.5
1.5
V
V
MHz
pF
600
Min
Typ
Max
0.1
0.1
Unit
A
A
V
V
V
(BR)CEO
I
C
= 10mA , I
B
= 0
V
(BR)EBO
I
E
= 1mA , I
C
= 0
h
FE
V
CE
= 1V , I
C
= 0.5A
V
CE
= 1V , I
C
= 2A
V
CE(sat)
I
C
= 2A , I
B
= 50mA
V
BE
f
T
C
ob
V
CE
= 1V , I
C
= 2A
V
CE
= 1V , I
C
= 0.5A
V
CB
= 10V , I
E
= 0 , f = 1MHz
1
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