SMD Type
Transistors
IC
Product specification
2SC3123
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)
0.55
High Conversion Gain :Gce=23dB(TYP.)
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power Dissipation
Junction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
20
3
50
25
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse Transfer Capacitance
Transition Frequency
Conversion Gain
Noise Figure
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 25V, I
E
= 0
V
EB
= 3V, I
C
= 0
20
40
150
0.4
900
20
1400
23
3.8
5.5
300
0.5
pF
MHz
dB
dB
Min
Typ
Max
100
1000
Unit
nA
nA
V
V
(BR)CEO
I
C
=1mA,I
B
=0
h
FE
C
re
f
T
G
ce
NF
V
CE
= 10 V, I
C
= 5mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
= 10 V, I
C
= 5mA
V
CC
=12V,fL=260MHz,f=200MHZ
Marking
Marking
HE
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0-0.1
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
