Product specification
2SC3134
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
2
Wide ASO and high durability against breakdown.
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
High V
EBO
.
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
j
T
stg
Rating
60
50
15
150
300
200
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
=40V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, f=1MHz
90
100
2.2
0.5
60
50
15
Min
Typ
Max
0.1
0.1
560
MHz
pF
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
=50mA, I
B
=5mA
V
(BR)CBO
I
C
=10ìA, I
E
=0
V
(BR)CEO
I
C
=1mA, R
BE
=
V
(BR)EBO
I
E
=10ìA, I
C
=0
h
FE
Classification
Marking
Rank
hFE
4
90 180
5
135 270
H
6
200 400
7
300 600
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
