SMD Type
Transistors
Product specification
2SC3265
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
High DC current gain: h
FE
(1) = 100320.
Low saturation voltage: V
CE (sat)
= 0.4 V (max)
(I
C
= 500 mA, I
B
= 20 mA).
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
30
25
5
800
160
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 30 V, I
E
= 0
V
EB
= 50 V, IC = 0
25
5
100
320
0.4
0.5
120
13
0.8
V
V
MHz
pF
Min
Typ
Max
0.1
0.1
Unit
ìA
ìA
V
V
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
V
(BR) EBO
I
E
= 0.1 mA, I
C
= 0
h
FE
V
CE
= 1 V, I
C
= 100 mA
V
CE (sat)
I
C
= 500 mA, I
B
= 20 mA
V
BE
f
T
C
ob
V
CE
= 1 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
hFE
EO
100
200
EY
160 320
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
