Product specification
2SC3324
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High hFE.hFE=200 to 700
Low noise.
Small package.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
High voltageV
CEO
=120V
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
120
120
5
100
20
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 120 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 6 V, I
C
= 2 mA
200
Min
Typ
Max
0.1
0.1
700
0.3
100
4
0.5
0.2
6
3
V
MHz
pF
dB
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= 10 mA, I
B
= 1 mA
f
T
C
ob
NF
V
CE
= 6 V, I
C
= 1 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CB
=6 V, I
C
=0.1 mA, f=100 Hz,R
g
=10 kÙ
V
CB
=6 V, I
C
=0.1 mA, f=1 kHz,R
g
=10 kÙ
h
FE
Classification
Marking
Rank
hFE
CBG
GR
200 400
CBL
BL
350 700
+0.1
0.38
-0.1
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
