Product specification
2SC3325
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Excellent hFE linearity : h
FE
(2) = 25 (min) (V
CE
= 6 V, I
C
= 400 mA).
High voltage: V
CEO
= 50 V (min).
Small package.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
50
50
5
500
50
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
* classification O: 25 (min), Y: 40 (min).
Symbol
I
CBO
I
EBO
h
FE
(1)
Testconditons
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 1 V, I
C
= 100 mA
70
25
0.1
0.8
300
7
0.25
1
V
V
MHz
pF
Min
Typ
Max
0.1
0.1
240
Unit
ìA
ìA
h
FE
(2) * V
CE
= 6 V, I
C
= 400 mA
V
CE (sat)
I
C
= 100 mA, I
B
= 10 mA
V
BE
f
T
C
ob
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 6 V, I
C
= 20 mA
V
CB
= 6 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
Rank
hFE
O
70 140
CE
Y
120 240
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
